General
Characteristics
|
Cooling |
Forced ventilation |
| Rated |
Continously used |
| Rectifier |
Method
|
Single phase Full Wave Rectifier Method |
| Device |
Diode |
| Inverter |
Method |
High Frequency(20kHz) PWM Stepwave |
| Device |
IGBT(Insulated Gate Bipolar Transistor) |
Transfer
|
Without any second |
| Transformer insulation class |
|
Input
Power
|
Phase
|
Single Phase |
| Rated Voltage |
110V/220V |
| Voltage range |
Rated Voltage 10% |
| Frequency |
50/60Hz
5% |
Output
Power
|
Phase |
Single Phase |
| Rated Voltage |
110V/220V |
| Voltage tolerance |
Below2% |
| Frequency tolerance |
Below 0.5% |
| Transient Voltage Flunctuation |
Below8%
(Voltage Down and Input Voltage Flunctuation Or 0~50% Load Flunctuation) |
| Transient Reaction |
Below 100ms(return below2%) |
| Output Voltage regulation |
5% |
| Slew rate |
THD(Total Harmonic Distortion) Below 5% (Linear Load100%) |
| Overload Inverter |
120%, 10min |
| Noise |
Below 55dB(measured 1.5m ahead, Height 1.5m) |
| Total Efficiency |
Over 85% |
| Transfer |
Below 4ms |
Energy Storage
|
Compensation time
|
0.5 sec (Full Load), 1sec(70% Load), 2sec(50% Load) |
| Energy Storage Device |
Super Capacitor |
Insulation
|
Endurance voltage |
AC 1000V 60Hz Applied during 1 second
(Exclude control circuit,semiconductor and Capacitor,Noise filter) |
| Insulate resistance |
5M Ohms(measured with DC 500V MEGGER)
(Exclude control circuit,semiconductor and Capacitor,Noise filter) |
| Earth Continuity |
10A 10sec |
Temperature
|
Transformer and Reactor |
Below 140  |
| Semiconductor Device |
Below 80 |
| Other thing(Switch) |
Below 40 |
Environment
|
Ambient Temperature |
Below 0 ~+40oC
(in Operation) |
| Humidity |
30~90% |
| Altitude |
< 1000m above sea level |
| Installment place |
Inside(Dust, Poisonous gas Free) |
